C4F6 is a critical component in semiconductor manufacturing, particularly for:
Plasma Etching: Used in plasma, ion beam, or sputter dry etching to create precise patterns on silicon-based integrated circuits.
Dielectric Etch: Highly effective for dielectric etch applications, enabling the production of intricate circuit designs.
Reactive Ion Etching (RIE): Serves as a feed gas in RIE processes to remove material from substrates with high precision.
Deep Reactive Ion Etching (DRIE): Acts as a passivation gas to protect sidewalls, ensuring high-aspect-ratio structures.
Chamber Cleaning: Utilized to clean etching equipment chambers due to its high reactivity and low toxicity.
C4F6 is typically used with carrier gases such as Xenon (Xe) and Argon (Ar) to enhance etching performance.
High Etching Performance: Offers superior etching rates and selectivity, enabling precise material removal for advanced semiconductor designs.
High Aspect Ratios: Supports the creation of narrow, deep grooves (45-25 nm line widths), critical for modern microelectronics.
Environmental Compatibility: Boasts a GWP of 0 and a short atmospheric lifetime (<1 day), minimizing its environmental footprint compared to alternatives like c-C4F8. It has no impact on the stratospheric ozone layer.
Selectivity: Exhibits high sensitivity to silicon dioxide over photoresist, silicon, or nitride, ensuring precise etching without damaging underlying materials.
Low VOC Emissions: Reduces volatile organic compound emissions, aligning with stringent environmental regulations.
Note: Some sources report a GWP of 290 for C4F6, which may reflect variations in measurement methodologies or potential errors. The consensus, supported by major suppliers, leans toward a GWP of 0, reinforcing its eco-friendly profile.
C4F6 is a toxic and flammable gas, requiring strict adherence to safety protocols:
Toxicity: Poses a risk of asphyxiation if inhaled.
Flammability: May explode if heated or improperly handled.
Handling: Must be managed in accordance with industry standards to ensure safety during storage, transport, and use.
Proper ventilation, protective equipment, and training are essential when working with C4F6.
Cylinder Sizes: Available in 10.2L (10 kg) and 47L (47 kg) cylinders with CGA 350 valve connections. Custom connections are available upon request.
Purity: Offered in 4N grade (99.99% purity) to meet the stringent requirements of semiconductor manufacturing.
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Regulatory Detail |
Information |
|---|---|
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DOT Name |
Hexafluoro-1,3-butadiene |
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DOT Hazard Class |
2.1 (Flammable Gas) |
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Subsidiary Class |
2.1 |
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UN Number |
UN 3160 |
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DOT Label |
Liquefied gas, toxic, flammable, Inhalation Hazard Zone C |
C4F6 is the preferred choice for semiconductor manufacturers seeking high-performance etching solutions that align with environmental sustainability goals. Its low C/F ratio and unsaturated chemical structure enable superior etching precision, while its negligible environmental impact makes it a forward-thinking option for eco-conscious industries. Whether for high-aspect-ratio contact/via etching, mask open processes, or dual damascene applications, C4F6 delivers unmatched results.